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| LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40XLT1G Features Low forward current Guard ring protected Low diode capacitance. 1 2 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. 1 Anode SOT- 23 3 Cathode BAS40 single diode. 3 Cathode/Anode ORDERING INFORMATION Device Marking Shipping 1 Anode 2 Cathode BAS40-04 double diode. LBAS40LT1G LBAS40LT3G LBAS40-04LT1G LBAS40-04LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1G LBAS40-06LT3G B1 B1 CB CB 45 5 45 5 L2 L2 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3 Cathode 1 Anode BAS40-05 double diode. 2 Anode 3 Anode 1 Cathode 2 Cathode BAS40-06 double diode. 1/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G MAXIMUM RATINGS (TA = 25C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 40 120 120 200 +150 150 +150 Unit V mA mA mA C C C Conditions tp<1s;<0.5 tp<10ms DEVICE MARKING LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2 ELECTRICAL CHARACTERISTICS(TA = 25C) Parameter Forward voltage(Fig.1) Symbol VF Max. 400 560 1 1 10 5 Unit mV mv v A pF Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V f=1MHz;VR=0 Reverse current(Fig.2 ;note1) IR Cd Diode capacitance(Fig.4) Note: 1. Pulse test:tp=300s;=0.02. THERMAL CHARACTERISTICS PARAMETER Thermal resistance from junction to ambient Note SYMBOL Rth j-a VALUE 500 UNIT k/w CONDITIONS note1 1. Refer to SOT23 or SOT143B standard mounting conditions. 2/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G Electrical characteristic curves(TA = 25C) 102 FORWARD VOLTAGE: I (A) R FORWARD VOLTAGE: I (mA) F 103 Tamb=85OC Tamb=150OC 2 O 10 Tamb=150 C 10 Tamb=25OC 10 1 Tamb=-40OC Tamb=85OC 1 10-1 10-1 10-2 Tamb=25OC 10-2 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 Fig.1 Forward current as a function of forward voltage; typical values. FORWARD VOLTAGE: V (V) F Fig.2 Reverse current as a function of reverse voltage; typical values. FORWARD VOLTAGE: V (V) R 103 FORWARD VOLTAGE: rdiff() 5 4 102 FORWARD VOLTAGE: Cd(pF) 3 2 10 1 1 -1 10 1 10 f=10KHz 10 2 0 0 10 20 30 O 40 FORWARD VOLTAGE: I (mA) F FORWARD VOLTAGE: V (V) R f=1MHz Tamb=25 C Fig.3 Differential forward resistance as a function of forward current;typical values. Fig.4 Diode capacitance as a function of reverse voltage;typical values. 3/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 C D H K J 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 4/4 |
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